Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the SiC crystal grown in this study was about 0.2mm/hr. N-type 2’’ SiC crystals exhibiting the 4H- and 6H-SiC polytype were successfully fabricated on C-face and Si-face, respectively. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was exhibited to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
I. G. Yeo et al., "Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method", Materials Science Forum, Vols. 679-680, pp. 44-47, 2011