Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

Im Gyu Yeo; Tae Woo Lee; Jong Hwi Park; Woo Sung Yang; Heui Bum Ryu; Mi Seon Park; Il Soo Kim; Byoung Chul Shin; Won Jae Lee; Tai Hee Eun; Seung Seok Lee; Myong Chuel Chun

doi:10.4028/www.scientific.net/MSF.679-680.44

Paper Titles

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28

Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
p.36

The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
p.40

Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
p.44

Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study
p.48

4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
p.55

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
p.59

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
p.63

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Effect of the Seed Polarity for High Quality...

Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

Abstract:

The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the SiC crystal grown in this study was about 0.2mm/hr. N-type 2’’ SiC crystals exhibiting the 4H- and 6H-SiC polytype were successfully fabricated on C-face and Si-face, respectively. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was exhibited to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal.

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Materials Science Forum (Volumes 679-680)

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44-47

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.44

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Online since:

March 2011

Authors:

Im Gyu Yeo, Tae Woo Lee, Jong Hwi Park, Woo Sung Yang, Heui Bum Ryu, Mi Seon Park, Il Soo Kim, Byoung Chul Shin, Won Jae Lee, Tai Hee Eun, Seung Seok Lee, Myong Chuel Chun

Keywords:

Dual-Seed, Polarity, Polytype, Sublimation, Transformation

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