Effect of Low Frequency Magnetic Field on SiC Solution Growth

Frédéric Mercier; Shin Ichi Nishizawa

doi:10.4028/www.scientific.net/MSF.679-680.32

Paper Titles

Experimental Verification of a Novel System for the Growth of SiC Single Crystals
p.16

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
p.20

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
p.24

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28

Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
p.36

The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
p.40

Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
p.44

Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study
p.48

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Effect of Low Frequency Magnetic Field on SiC...

Effect of Low Frequency Magnetic Field on SiC Solution Growth

Abstract:

We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic fields. Buoyancy and Marangoni convection are taken into account. Our numerical results revealed that the magnetic field parameters have a strong impact on the melt convection. We also propose a solution to increase the mass transfer at the crystal growth front.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

32-35

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.32

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Online since:

March 2011

Authors:

Frédéric Mercier, Shin Ichi Nishizawa

Keywords:

Bulk, Fluid Dynamic, Matter Transport, Modeling, Solution Growth

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