Polytype Stability of 4H-SiC Seed Crystal on Solution Growth

Alexander Alexander; Kazuaki Seki; Shigeta Kozawa; Yuji Yamamoto; Toru Ujihara; Yoshikazu Takeda

doi:10.4028/www.scientific.net/MSF.679-680.24

Paper Titles

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
p.8

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
p.12

Experimental Verification of a Novel System for the Growth of SiC Single Crystals
p.16

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
p.20

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
p.24

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28

Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
p.36

The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
p.40

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Polytype Stability of 4H-SiC Seed Crystal on...

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth

Abstract:

We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.

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Materials Science Forum (Volumes 679-680)

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24-27

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.24

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Online since:

March 2011

Authors:

Alexander Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda

Keywords:

4H-SiC, Polytype Transition, Solution Growth, Spiral Growth

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