Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique

Irina G. Galben-Sandulache; Maya Marinova; Alkyoni Mantzari; Guoli L. Sun; Ariadne Andreadou; Didier Chaussende; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.679-680.20

Paper Titles

Enlargement Growth of Large 4H-SiC Bulk Single Crystal
p.3

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
p.8

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
p.12

Experimental Verification of a Novel System for the Growth of SiC Single Crystals
p.16

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
p.20

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
p.24

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28

Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
p.36

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Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique

Abstract:

This work presents the crystalline quality investigation of 3C-SiC unseeded crystals grown from vapor phase. Samples were polished after different crystallographic planes from crystals grown with or without nitrogen flow. The structural and optical investigation showed that the central part of the samples exhibited a very good crystalline quality. The best samples proved to be the {100} growth sectors where the only defects found were stacking faults with a defect density under 103 cm-1. At the edges, i.e. between two adjacent growth sectors, structural investigation by transmission electron microscopy revealed stacking faults and hexagonal polytype inclusions. The nitrogen doping was found not to have an influence on the crystalline quality.