On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
A. A. Lebedev et al., "On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals", Materials Science Forum, Vols. 679-680, pp. 12-15, 2011