On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Abstract:

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It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

12-15

DOI:

10.4028/www.scientific.net/MSF.679-680.12

Citation:

A. A. Lebedev et al., "On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals", Materials Science Forum, Vols. 679-680, pp. 12-15, 2011

Online since:

March 2011

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Price:

$35.00

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