On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Alexander A. Lebedev; Pavel L. Abramov; A.S. Zubrilov; Elena V. Bogdanova; Sergey P. Lebedev; Natasha V. Seredova; Alla S. Tregubova

doi:10.4028/www.scientific.net/MSF.679-680.12

Paper Titles

Committees and Preface

Enlargement Growth of Large 4H-SiC Bulk Single Crystal
p.3

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
p.8

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
p.12

Experimental Verification of a Novel System for the Growth of SiC Single Crystals
p.16

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
p.20

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
p.24

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28

Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680On Application of Sublimation Epitaxy to Growth of...

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Abstract:

It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.

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Materials Science Forum (Volumes 679-680)

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12-15

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.12

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Online since:

March 2011

Authors:

Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, Natasha V. Seredova, Alla S. Tregubova

Keywords:

3C-SiC, Sublimation Epitaxy, Volume Growth

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References

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