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The experimental materials are Ti-48Al-2Cr-2Nb, so the paper sets this material as an example.
Materials Science and Engineering A219 (1996) 212-220
Applied Mechanics and Materials.457-458(2014) 7-10
Materials Science and Engineering A192/193 (1995) 457-464
Journal of Basic Engineering.,1963;85:528-534.

Trahair: Journal of Structural Engineering, Vol. 125 (1999), p. 1291 [3] Y.L.
Trahair: Journal of Structural Engineering, Vol.120 (1994), p. 2041 [4] L.H.
Clarke: Journal of Engineering Mechanics, Vol.125 (1999), p. 1358 [5] M.A.
Pi: Journal of Structural Engineering ASCE , Vol.118 (2002), p. 719 [6] J.
Guo: Tsinghua Science and Technology, Vol. 7 (2002), p. 322 [8] J.

Cete, “SurFace Modification Of Aluminium by Friction Stir Processing”, Journal of Materials Processing technology 211 (2011) 313-317 [2] Miracle D B, ‘Metal matrix composites – From science to technological significance’.
‘Friction stir processing: a novel technique for fabrication of surface Composite’, Materials Science and Engineering: A 341(2003) 307-310 [4] Don-Hyun CHOI1, Yong-II KIM2, DAE-Up KIM3, Seung-Boo JUNG1,2, ‘Effect of SiC particles on microstructure and mechanical property of friction stir processed AA6061-T4’, Trans.
Molaiekiya, ‘Investigating effects of process parameters on microstructural and mechanical properties of Al5052/SiC metal matrix composite fabricated via friction stir processing’ Materials and Design 37 (2012) 458–464 [6] Mehdi Zohoora, M.K.
Salamia, ‘Effect of processing parameters on fabrication of Al–Mg/Cu composites via friction stir processing’, Materials and Design 39 (2012) 358–36 [7] R.
Vijay, ‘Fabrication and characterization of Cu/B4C surface dispersion strengthened composite using friction stir processing,’ Archives of metallurgy and materials, 10.2478/amm-(2014)-0014 [8] Alaneme KK, Akintunde IB, Olubambi PA, Adewale TM.

Study on the Evolution of Welding Residual Stress under Tension Loading Condition Jitai NIU a , Cheng JIN b and Shiyu HE School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P.R.China a jtn@hit.edu.cn, bjincheng@126.com Keywords: Welding; Residual stress; Evolution; Tension load.
Experimental procedure Materials and welding condition.
Fig. 1 Butt weldment dimension Table 1 TIG welding conditions Filler wire material Filler wire diameter Tungsten electrode diameter Welding current(AC) Wire feed rate Argon flow 5A06 3mm 2.5mm 120-130A 60-70 mm/min 7L/min 20 )( 2 1 d d E A γ+ −= (1) ])(3)( 1 4 [ 2 1 40 20 d d d d E B − + + −= γ γ (2 ) 1 3 1 3 1,2 4 4 cos(2 ) A B ε ε ε ε σ β + − = ± (3) 1 2 1 3 1 3 1 2 ( ) 2 tg ε ε ε β ε ε − − − = − (4) Fig. 2 Measure residual stress by hole-drilling method Results and discussion The residual stress is measured before and after tension test as shown in Fig. 3.
Acknowledgement This work was supported by the National Natural Science Foundation of China (No. 90205035).
Wahab: Journal of Materials Processing Technology Vol. 77 (1998), p. 201 [3] J.

Synthesis of NdFeO3 Perovskites in A Reverse Microemulsion and Its Visible Light Photocatalytic Activity Ying-juan Haoa, Bo Lib, Rui-hong Liuc, and Fa-tang Lid College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China ayingjuanhao@126.com, biceberglibo@163.com, cliuruihong73@126.com, dlifatang@126.com Keywords: NdFeO3, reverse microemulsion, photocatalytic activity Abstract.
Introduction A typical ABO3-type perovskite structure material has been demonstrated to be promising inorganic materials in photocatalysis field because of its narrow band gap and high absorptivity for sunlight [1-3].
Experimental Analytical grade Nd(NO3)3·6H2O, Fe(NO3)3·9H2O, cyclohexane, Triton X-100, n-butanol and acetone were used as starting materials without further purification.
Porta et al. [7] indicated that the structure and redox properties of NdFeO3 perovskites were similar to those of LaFeO3 perovskites which have been demonstrated to be one of excellent photocatalysis materials.
Li et al: Chemical Journal of Chinese Universities, Vol. 28 (2007), p. 415 (in Chinese) [2] V.

Owing to its unique properties and wide engineering applications, magnetorheological fluids (MRF) has become a hot study area in the field of smart materials.
Introduction Magnetorheological fluids (MRF) is a kind of smart material whose behavior can be regulated, it is a stable suspension formed from non-colloidal particles being dispersed into insulating carrier medium whose rheological behavior can be controlled by changing external magnetic field [1].
In this set-up, the crystal detector needs to satisfy square detection such that detection current can represent relative power; a galvanometer is used for measuring output power of reflection-type resonant cavity with its range 0~200 μA; the frequency of microwave is measured by direct-reading frequency meter; when measure microwave by crystal detector, in order to obtain higher detection efficiency, the detector is always equipped with an adjustable short-circuiting piston, adjusting its position can locate detector tube at the antinode of microwave, thus it should be noted to adjust its position when frequency is changed so as to make detector tube always located at that place; some medium or absorbing materials which can greatly absorb microwave energy are loaded into waveguide as matched load, it can almost absorb all the incident power; a container used for containing MRF is made up of plastic sheet (length 3.919cm, width 2.086cm, height 0.942cm, thickness 0.107cm).
Acknowledgement The authors are grateful for the financial support from natural science foundation of Hubei Province (No. 2007ABA086).
Kordonsky: Journal of Intelligent Material Systems and Structures Vol. 7 (1996), p. 123 [2] Jijun Fan, Xiaoping Zhao, Xiuming Gao, Changnian Cao: J.

It is simplified calculation so using existing material curve.
Acknowledgements: This project was supported by the National Natural Science Foundation of China(50978158)and Natural Science Foundation of Shandong Province(Q2007F02) References [1] XiongXueYu, CaiYue, HuangDingYe.
Calculation of ultimate bearing capacity for prestressed concrete structure subjected to fire [J].Journal of natural disasters, Vol.14 (2), pp147-pp154, 2005 [2]WangYuZhuo, FuChuanGuo, HanYueZhen.
Journal of Shandong Jinzhou University.

Face Recognition Based on Semiconductor Neurocomputer Ying Huang College of Computer Science ＆ Technology, College of Software, Zhejiang University of Technology, Hangzhou 310023, China Email:huangyingjtt@163.com Keywords: Semiconductor, Neural Networks, Face Recognition Abstract: Since CASSANDRA-Ⅰwas successfully produced by Wang Shoujue in 1995, In this paper, we analysis its the learning method of the semiconductor neurocomputer, and apply the semiconductor neurocomputer CASSANDRA-ⅠⅠ to face recognition.
There are a lot of ways to implement this structure, all of that can be classified into two kinds: all-hardware implementation and virtual implementation, according to the correspondence between material physical units and neuron.
[2] Shoujue Wang, Liyan Wang, Yun Wei and Huaxiang Lu, A General Purpose Neuro Processor with Digital-Analog Processing, Chinese Journal of Electronics, Vol. 3, No. 4, (1994) 73-75
[4] Huaxiang Lu, Shoujue Wang, The research of semiconductor artificial neural network and its development, Electronic Science and Technology Leader, (1996.9) 10-12
[5] Shoujue Wang, Huaxiang Lu, Xiangdong Chen and Yujuan Ceng, On the Hardware for Artificial Neural Networks and Neurocomputer, Journal of Shenzhen University, Vol.14, No.1, (1997) 8-13

Investigation on p-In0.51Ga0.49As LOPC mode by Raman spectra Hanchao Gao 1,2,a*, Zhijun Yin2,b, Ziqian Huang2,c, Zhonghui Li2,d and Zili Xie1,e (1School of Electronic science and engineering, Key laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing, Jiangsu, 210093, China) (2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, Jiangsu, 210016, China) ahanchaogao@126.com,byeeson21@163.com,chzq30@tom.com, dzhonghuili@126.com,exzl@nju.edu.cn Key words: p-InGaAs; Raman spectra; LOPC mode Abstract.
InGaAs is a very important material for fabricating optical and electronic devices, high-speed devices and high performance detectors.
Heavily p doped InGaAs is usually used as base material in heterojunction bipolar transistor (HBT).
Experiments Heavily p doped GaAs samples were grown on (001) SI-InP substrates by metal-organic chemical vapor deposition (MOCVD) using trimethylgallium (TMG), trimethylindium (TMIn) and arsine as source materials.
Takahashi: Journal of applied physics, vol.12(1995), p.7265

Koberstein3 1Department of Sciences and Engineering, Regional University of Northwest Rio Grande do Sul State, 98700-000, Ijui, RS, Brazil 2Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S.
Semiconductor thin-film resistors can be used as strain gauges given that semiconductor materials exhibit large piezoresistive effect.
Gujrathi, Journal of Materials Research 7 (1992) 2478-2487
Fraga, Materials Science Forum 679-680 (2011) 217-220