Investigation on p-In0.51Ga0.49As LOPC Mode by Raman Spectra

Han Chao Gao; Zhi Jun Yin; Zi Qian Huang; Zhong Hui Li; Zi Li Xie

doi:10.4028/www.scientific.net/AMR.887-888.442

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Investigation on p-In_0.51Ga_0.49As LOPC Mode by Raman Spectra
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 887-888Investigation on p-In0.51Ga0.49As LOPC Mode by...

Investigation on p-In_0.51Ga_0.49As LOPC Mode by Raman Spectra

Abstract:

Heavily P type In_0.51Ga_0.49As was grown with hole concentration from 3.3E19cm^-3 to 4.6E19cm^-3. Standard (001) surface Raman backscattering geometry was used to measure samples. Two mode behavior and LO phonon-plasmon-coupled mode (LOPC) were observed obviously. Raman peak of LOPC mode is insensitive to hole concentration. The full width at half maximum (FWHM) of LOPC and the intensity ratio of GaAs-like LO mode and LOPC mode depend on hole concentration. The coupling strength of GaAs-like LO mode and plasmons is weak when hole concentration is very high and Raman peak of LOPC mode is independence with increasing hole concentration.