Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)

Dong Guo Zhang; Zhong Hui Li; Da Qing Peng; Xun Dong

doi:10.4028/www.scientific.net/AMR.887-888.446

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 887-888Influence of the Nitridation Time after the Al...

Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)

Abstract:

The epitaxial growth of Gallium Nitride (GaN) on 2 inch Si (1 1 1) substrates was investigated, and it was found that by inserting a surface nitridation layer prior to Aluminum Nitride (AlN) nucleation upon substrate, the discoid defects and cracks on the surface were suppressed. Furthermore, compared with the GaN epitaxial layer grown without nitridation, the one with a 30 sec. nitridation layer showed a twice brighter integrated photoluminescence (PL) spectra intensity and a (0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 13.6 arcminute. The crystalline quality of GaN epitaxial layer became worse when the nitridation time exceeded a critical value, and even more cracks appeared on the surface although no discoid defect appeared anymore.

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Advanced Materials Research (Volumes 887-888)

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446-449

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.887-888.446

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Online since:

February 2014

Authors:

Dong Guo Zhang, Zhong Hui Li*, Da Qing Peng, Xun Dong

Keywords:

Crack, GaN, MOCVD, Si Substrate

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