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Epitaxial Growth of SiC Epilayers for 10kV Schottky Diodes Using Chloride-Based CVD

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Abstract:

A 100μm silicon carbide epilayer with mean doping concentration 6×1014 cm-3 was achieved on 3 inch silicon carbide substrate using a growh rate of 30 μm/h. Hydrogen gas foil rotation was adopted to improve the doping uniformity. The intra-wafer thickness and doping uniformity was 1.83% and 7.51%, respectively. Schottky diodes fabricated on this epilayer presented a breakdown voltage of 10kV. This is the first report of 10kV schottky diodes fabricated on silicon carbide epilayer made in China.

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Periodical:

Advanced Materials Research (Volumes 887-888)

Pages:

462-466

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.887-888.462

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Online since:

February 2014

Authors:

Yun Li*, Zhi Fei Zhao, Zhong Hui Li

Keywords:

4H-SiC, Chloride-Based CVD, Doping Uniformity, Epitaxy, Growth Rate

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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