Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films

Mariana A. Fraga; Leandro L. Koberstein

doi:10.4028/www.scientific.net/MSF.740-742.431

Paper Titles

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
p.413

Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals
p.417

Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals
p.421

Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
p.425

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films
p.431

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
p.435

Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
p.439

Temperature Dependence of Raman Scattering in 4H-SiC
p.443

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
p.447

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Study on the Correlation between Film Composition...

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films

Abstract:

The effects of carbon content on the piezoresistive properties of non-stoichiometric silicon carbide (SixCy) films deposited on thermally oxidized (100) Si substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) from silane (SiH4) and methane (CH4) gas mixtures have been investigated. Four different film compositions have been obtained by varying SiH4 flow ratios from 1.0 to 4.0 sccm, while the other parameters were kept constant. In order to evaluate the piezoresistive properties of the SixCy films, we have developed test structures consisting of SixCy thin-film resistors defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. The gauge factor (GF) and temperature coefficient of resistance (TCR) of each SixCy film were measured.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

431-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.431

Citation:

Cite this paper

Online since:

January 2013

Authors:

Mariana A. Fraga, Leandro L. Koberstein

Keywords:

Film Composition, Non-Stoichiometric Silicon Carbide Thin Films, PECVD, Piezoresistive Properties

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R.K. Nahar, V.K. Khanna, B.R. Marathe, Thin Solid Films 78 (1981) 147-152.

Google Scholar

[2] A. S. Mohammed, W. A. Moussa, E. Lou, Sensors 8 (2008) 2642-2661.

Google Scholar

[3] P.M. Sarro, C.R. deBoer, E. Korkmaz, J.M.W. Laros, Sensors and Actuators A: Physical 67 (1998) 175-180.

DOI: 10.1016/s0924-4247(97)01730-5

Google Scholar

[4] M. J. Loboda,J. A. Seifferly, F. C. Dall J. Vac. Sci. Technol. A 12, (1994) 90-97.

Google Scholar

[5] E. Gat, M.A. El Khakan, M. Chaker, A. Jean, S. Boily, H. Pépin, J.C. Kieffer, J. Durand, B. Cros, F. Rousseaux, S. Gujrathi, Journal of Materials Research 7 (1992) 2478-2487.

DOI: 10.1557/jmr.1992.2478

Google Scholar

[6] L. Jiang, X. Chen, X. Wang, L.Xu, F. Stubhan, K.Merkel, Thin Solid Films 352 (1999) 97-101.

Google Scholar

[7] A. Desalvo, F. Giorgis, C. F. Pirri, E. Tresso, P. Rava, R. Galloni, R. Rizzoli, C. Summonte J. Appl. Phys. 81 (1997) 7973-7980.

DOI: 10.1063/1.365400

Google Scholar

[8] M. A. Fraga, Materials Science Forum 679-680 (2011) 217-220.

Google Scholar

[9] L. R. Dolittle, Nucl. Instrum. Methods Phys. Res. B 9 (1985) 344-351.

Google Scholar

[10] M. A. Fraga, H. Furlan, M. Massi, I. C. Oliveira, Microsystem Technologies 16 (2010) 925-930.

Google Scholar