Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals

Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

doi:10.4028/www.scientific.net/MSF.740-742.413

Paper Titles

Lateral Boron Distribution in Polycrystalline SiC Source Materials
p.397

Optical Characterization of Compensating Defects in Cubic SiC
p.401

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
p.405

Origins of Negative Fixed Charge in Wet Oxidation for SiC
p.409

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
p.413

Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals
p.417

Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals
p.421

Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
p.425

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films
p.431

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Persistent Photoconductivity in p-Type 4H-SiC Bulk...

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals

Abstract:

We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals grown by a modified Lely method by differential microwave photoconductance decay (μ-PCD) measurements using a 349-nm laser as an excitation source. We observed persistent photoconductivity (PPC) in the p-type SiC bulk crystals. The decay time at room temperature was 2600 μs. The decay time decreased with increasing temperature, resulting in 120 μs at 250oC, and the activation energy of the decay times was determined to be 140±10 meV. Long decay characteristics were also observed by below-band-gap excitation at 523 or 1047 nm. On the other hand, no PPC was observed in p-type homoepitaxial layers grown by hot-wall chemical vapor deposition.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

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413-416

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.413

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Online since:

January 2013

Authors:

Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Keywords:

Al-Doped Silicon Carbide (SiC), Microwave Photoconductance Decay Measurement (u-PCD), Modified Lely Method, Persistent Photoconductivity (PPC)

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References

[1] H. Matsunami and T. Kimoto: Mater. Sci. Eng. R. 20, 125 (1997).

Google Scholar

[2] J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour: IEEE Trans. Electron devices 49, 658 (2002).

DOI: 10.1109/16.992876

Google Scholar

[3] M. Kato, M. Kawai, T. Mori, M. Ichimura, S. Sumie, and H. Hashizume: Jpn. J. Appl. Phys. 46, 5057 (2007).

Google Scholar

[4] S. G. Sridhara, R. P. Devaty, and W. J. Choyke: J. Appl. Phys. 84, 2963 (1998).

Google Scholar

[5] D. V. Lang and R. A. Logan: Phys. Rev. Lett. 39, 635 (1977).

Google Scholar

[6] H. X. Jiang and J. Y. Lin: Phys. Rev. Lett. 64, 2547 (1990).

Google Scholar

[7] P. M. Mooney: J. Appl. Phys. 67, R1 (1990).

Google Scholar

[8] D. E. Theodorou and C. I. Symeonidis: Phys. Rev. B 37, 10854 (1988).

Google Scholar

[9] G. E. Zardas, D. E. Theodorou, P. C. Euthymiou, Ch. I. Symeonides, F. Riesz, and B. Szentpall: Solid State Comm. 105, 77 (1998).

DOI: 10.1016/s0038-1098(97)10065-5

Google Scholar

[10] C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, and E. R. Weber: Phys. Rev. B 54, 17745 (1996).

DOI: 10.1103/physrevb.54.17745

Google Scholar

[11] D. J. Chadi and K. J. Chang: Phys. Rev. Lett. 61, 873 (1988).

Google Scholar