Lateral Boron Distribution in Polycrystalline SiC Source Materials

Margareta K. Linnarsson; Michl Kaiser; Rickard Liljedahl; Valdas Jokubavicius; Yi Yu Ou; Peter J. Wellmann; Hai Yan Ou; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.397

Paper Titles

Diffusion Study of Chlorine in SiC by First Principles Calculations
p.381

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
p.385

EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
p.389

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)
p.393

Lateral Boron Distribution in Polycrystalline SiC Source Materials
p.397

Optical Characterization of Compensating Defects in Cubic SiC
p.401

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
p.405

Origins of Negative Fixed Charge in Wet Oxidation for SiC
p.409

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
p.413

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Lateral Boron Distribution in Polycrystalline SiC Source Materials

Abstract:

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x10¹⁸ cm^-3 and 1x10¹⁹ cm^-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.