Paper Titles

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
p.369

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
p.373

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC
p.377

Diffusion Study of Chlorine in SiC by First Principles Calculations
p.381

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
p.385

EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
p.389

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)
p.393

Lateral Boron Distribution in Polycrystalline SiC Source Materials
p.397

Optical Characterization of Compensating Defects in Cubic SiC
p.401

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Electron Paramagnetic Resonance Studies of Nb in...

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

Article Preview

Abstract:

Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). An EPR spectrum with a hyperfine (hf) structure consisting of ten equal-intensity lines was observed. The hf structure is identified to be due to the hf interaction between an electron spin S=1/2 and a nuclear spin of 93Nb. The hf interaction due to the interaction three nearest Si neighbors was also observed, suggesting the involvement of the C vacancy (VC) in the defect. Only one EPR spectrum was observed in 6H-SiC polytype. The obtained spin-Hamiltonian parameters are similar to that of the Nb-related EPR defect in 4H-SiC, suggesting that the EPR center in 6H-SiC is the NbSiVC complex in the neutral charge state, NbSiVC0. Photoexcitation EPR experiments suggest that the single negative charge state of the NbSiVC complex is located at ~1.3 eV below the conduction band minimum.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

385-388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.385

Citation:

Cite this paper

Online since:

January 2013

Authors:

Xuan Thang Trinh, Andreas Gällström, Nguyen Tien Son, Stefano Leone, Olle Kordina, Erik Janzén

Keywords:

Electron Paramagnetic Resonance (EPR), Nb, Split-Vacancy Complex

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M. W. J. Choyke and L. Patrick, Silicon Carbide l973 (University of South Carolina Press, Columbia, 1974), p.261

[2] A.W.C. Van Kemenade and S. H. Hagen, Solid State Commun. 14 (1974) 1331.

[3] K.M. Lee, Le Si Dang, G.D. Watkins, and W.J. Choyke, Phys. Rev. B 32 (1985) 2273.

[4] J. Schneider, A. Dörnen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. 56 (1990) 1184.

[5] M. Kunzer, H. D. Müller, and U. Kaufmann, Phys. Rev. B 48 (1993) 10846.

[6] J. Baur, M. Kunzer, and J. Schneider, Phys. Stat. Sol. (a) 162 (1997) 153.

[7] P.G. Baranov, V.A. Khramtsov, and E.N. Mokhov, Semicond. Sci. Technol. 9 (1994) 1340

[8] N.T. Son, A. Ellison, B. Magnusson, M.F. MacMillan, W.M. Chen, B. Monemar, and E. Janzén, J. Appl. Phys. 86 (1999) 4348

[9] P. G. Baranov and E. N. Mokhov, Soviet Phys. Solid State 38, (1996) 798

[10] P. G. Baranov, I.V. Ilyn, E. N. Mokhov, and V.A. Khramtsov, Mater. Sci. Forum 529 (2001) 353-356

[11] K. Irmscher, I. Pintilie, L. Pintilie, D. Schulz, Physica B 730 (2001) 308-310.

DOI: 10.1016/s0921-4526(01)00887-0

[12] J. Baur, M. Kunzer, K. F. Dombrowski, U. Kaufmann, J. Schneider, P. G. Baranov, and E. N. Mokhov, Inst. Phys. Conf. Ser. 155 (1997) 933.

[13] L. V. C. Assali, W. V. M. Machado, and J. F. Justo, Appl. Phys. Lett. 89 (2006) 072102.

[14] V. Ivády, A. Gällström, N. T. Son, E. Janzén, and A. Gali, Phys. Rev. Lett. 107 (2011) 195501.

[15] N.T. Son, V. Ivády, A. Gali, A. Gällström, S. Leone, O. Kordina, and E. Janzén, Mater. Sci. Forum 717-720 (2012) 217.

DOI: 10.4028/www.scientific.net/msf.717-720.217

[16] N.T. Son, B. Magnusson, Z. Zolnai, A. Ellison, and E. Janzén, Mater. Sci. Forum 457-460 (2004) 437.

DOI: 10.4028/www.scientific.net/msf.457-460.437

[17] A. Gällström, I.G. Ivanov, S. Leone, B. Magnusson, O. Kordina, N.T. Son, A. Henry, V. Ivády, A. Gali, and E. Janzén: submitted to Physical Review B (2012). See also I.G. Ivanov, A. Gällström, S. Leone, O. Kordina, N.T. Son, A. Henry, V. Ivády, A. Gali, and E. Janzén, this conference.

DOI: 10.4028/www.scientific.net/msf.740-742.405