Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

Maxim N. Lubov; Joerg Pezoldt; Yuri V. Trushin

doi:10.4028/www.scientific.net/MSF.740-742.393

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EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
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Lateral Boron Distribution in Polycrystalline SiC Source Materials
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Kinetic Monte Carlo Simulation of Impurity Effects...

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

Abstract:

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

393-396

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.393

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Online since:

January 2013

Authors:

Maxim N. Lubov, Joerg Pezoldt, Yuri V. Trushin

Keywords:

Impurity, Kinetic Monte Carlo Simulation, Nucleation, SiC Cluster

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