Optical Characterization of Compensating Defects in Cubic SiC

Abstract:

We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibrium carrier dynamics, we analyzed impact of carrier density and temperature on carrier lifetime and recharged trap recovery rate. Large carrier lifetime and small diffusivity at low injections in highly compensated samples and their dependences on injection were explained by optical recharge of compensating aluminum impurities. The complete recharge of the compensating impurities by optical means allowed us to calculate the compensating aluminum density in n-type samples and compensating nitrogen in p-type ones.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 401-404
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.401
• Online since: January 2013
• Authors: Patrik Ščajev, K. Jarašiūnas, P.L. Abramov, S.P. Lebedev, Alexander A. Lebedev
• Keywords: Carrier Lifetime, Compensation, Cubic Silicon Carbide (3C-SiC), Diffusion Coefficient

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