Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals

Martin Wilhelm; Michl Kaiser; Valdas Jakubavicius; Mikael Syväjärvi; Yi Yu Ou; Hai Yan Ou; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.740-742.421

Paper Titles

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
p.405

Origins of Negative Fixed Charge in Wet Oxidation for SiC
p.409

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
p.413

Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals
p.417

Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals
p.421

Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
p.425

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films
p.431

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
p.435

Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
p.439

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Photoluminescence Topography of Fluorescent SiC...

Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals

Abstract:

The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

421-424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.421

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Online since:

January 2013

Authors:

Martin Wilhelm, Michl Kaiser, Valdas Jakubavicius, Mikael Syväjärvi, Yi Yu Ou, Hai Yan Ou, Peter J. Wellmann

Keywords:

6H-SiC, Epitaxy, Luminescent SiC, Photoluminescence Topography

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References

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