Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing

Hui Deng; Kazuya Yamamura

doi:10.4028/www.scientific.net/MSF.740-742.435

Paper Titles

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Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals
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Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
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Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
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Temperature Dependence of Raman Scattering in 4H-SiC
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The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Subsurface Atomic Structure of 4H-SiC (0001)...

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing

Abstract:

Plasma-assisted polishing (PAP) was proposed for finishing difficult-to-machine materials, such as single-crystal SiC, reaction-sintered SiC, diamond, and sapphire. In the case of PAP application to the finishing of the 4H-SiC surface, an atomically smooth surface without any scratches was obtained. In this study, we observed 4H-SiC (0001) surfaces processed by water vapor plasma oxidation and PAP using ceria abrasives through cross-sectional transmission electron microscopy (XTEM). Water vapor plasma oxidation was conducted for 1 min, 5 min and 60 min. An intermediate layer located between SiO2 and SiC, which corresponds to silicon oxycarbide, was clearly observed in the case of a short oxidation. As oxidation time increased from 1 min to 60 min, average oxidation rate decreased from 2.7 nm/min to 0.6 nm/min. An atomically smooth 4H-SiC (0001) surface was obtained after PAP for 60 min using ceria abrasives.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.435

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Online since:

January 2013

Authors:

Hui Deng, Kazuya Yamamura

Keywords:

4H-SiC, Atmospheric Pressure Plasma, Cross-Sectional TEM, Oxidation

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References

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