The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples

Konstantinos Zekentes; Katerina Tsagaraki; Aikaterini Breza; Nikolaos Frangis

doi:10.4028/www.scientific.net/MSF.740-742.447

Paper Titles

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films
p.431

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
p.435

Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
p.439

Temperature Dependence of Raman Scattering in 4H-SiC
p.443

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
p.447

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
p.451

Theoretical Study of N Incorporation Effect during SiC Oxidation
p.455

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
p.459

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
p.465

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The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples

Abstract:

The purpose of the present study is to study the crystal periodicities that appear in 4H- and 6H-SiC material after the implantation with nitrogen and prior to post-implantation annealing. High Resolution X-Ray diffraction (HRXRD) and Transmission Electron Microscopy (TEM) have been employed towards this purpose. Extra peaks at smaller, than the main (00n) peak, diffraction angles in HRXRD scans and extra spots in the electron diffraction patterns have been observed due to the presence of these periodicities. Higher lattice constant periodic structures are apparently formed from the implanted nitrogen ions located at interstitial sites and disappear after the annealing and the resulting positioning of nitrogen atoms in substitutional sites.