The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films

M. Kitabatake; J. Sameshima; Osamu Ishiyama; K. Tamura; H. Ohshima; N. Sigiyama; Y. Yamashita; T. Tanaka; J. Senzaki; H. Matsuhata

doi:10.4028/www.scientific.net/MSF.740-742.451

Paper Titles

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
p.435

Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
p.439

Temperature Dependence of Raman Scattering in 4H-SiC
p.443

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
p.447

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
p.451

Theoretical Study of N Incorporation Effect during SiC Oxidation
p.455

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
p.459

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
p.465

A New-Type of Defect Generation at a 4H-SiC/SiO₂Interface by Oxidation Induced Compressive Strain
p.469

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742The Integrated Evaluation Platform for SiC Wafers...

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films

Abstract:

It has been widely accepted that wide-band-gap semiconductor SiC can provide low-loss semiconductor switches and diodes for the power electronics applications. The SiC devices enable the low-loss and compact converters and inverters.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

451-454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.451

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Online since:

January 2013

Authors:

M. Kitabatake, J. Sameshima, Osamu Ishiyama, K. Tamura, H. Ohshima, N. Sigiyama, Y. Yamashita, T. Tanaka, J. Senzaki, H. Matsuhata

Keywords:

Defect, Epitaxial Film, Evaluation, Step Bunching, TDDB, Wafer

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References

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DOI: 10.1007/978-3-540-74761-1_23

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[3] T. Yamashita, et., al., to be presented in ECSCRM2012.

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[4] J. Sameshima, and et. al., to be presented in ECSCRM2012.

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