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Theoretical Study of N Incorporation Effect during SiC Oxidation

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Abstract:

We investigated the atomistic mechanism of N incorporation during SiC oxidation by the first principles calculation. We found that N atoms play two characteristic roles in NO oxidation of SiC surface. One is that N atoms tend to form three-fold coordinated covalent bonds on a SiC(0001) surface, which assist the termination of surface dangling bonds, leading to improve the interface properties. The other is that N atoms form N-N bond like a double bond. The N2 molecule is desorbed from SiC surface, which do not disturb the oxidation process of SiC surfaces. These results indicate that N incorporation is effective to suppress defect state generation at SiO2/SiC interfaces during SiC oxidation.

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Silicon Carbide and Related Materials 2012 View Preview

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

455-458

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.455

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Online since:

January 2013

Authors:

Shigenori Kato, Kenta Chokawa, Katsumasa Kamaiya, Kenji Shiraishi

Keywords:

4H-SiC, First-Principle, Nitrogen, Oxidation

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] V. V. Afnas'ev and A. Stesmans, Appl. Phys. Lett. 71, 3844 (1997).

Google Scholar

[2] V. V. Afanas'ev, M. Bassler, G. Pensl, M. J. Schulz, and E. Stein von Kamienski, J. Appl. Phys. 79, 3108 (1996).

Google Scholar

[3] K. Chokawa, S. Kato, K. Kamiya, K. Shiraishi, ECSCRM 2012. We6-3 (2012).

Google Scholar

[4] D. Okamoto, H. Yano, T. Hatayama and T. Fuyuki, Appl. Phys. Lett. 96, 203508 (2010).

Google Scholar

[5] P. Deak et al J. Physics D-Applied Physics vol 40(20), pp.6243-6253, Oct 21 (2007).

Google Scholar

[6] S.W. Wang et al, Physical Review Letters Vol 98(12), Art. no 026101, Jan 12 (2007).

Google Scholar

[7] CR Ashman et al, Physical Review B Vol 80(8), Art. 085138 Aug (2009).

Google Scholar

[8] K. Chatty, V. Khemka, T. P. Chow, and R. J. Gutmann, J. Electron. Mater. 28, 161 (1999).

Google Scholar

[9] T. Kimura, T. Ishikawa, N. Soejima, K. Nomura, T. Sugiyama, ECSCRM 2012. IP1 (2012).

Google Scholar

[10] Y. Kangawa, T. Ito, A. taguchi, K. Shiraishi, T. Ohachi, SURFACE SCIENCE 493 1~3, p.178~181 (2001).

DOI: 10.1016/s0039-6028(01)01210-9

Google Scholar

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