Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors

Yoshihiro Irokawa

doi:10.4028/www.scientific.net/MSF.740-742.473

Paper Titles

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Characterization of the Metal-Semiconductor...

Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors

Abstract:

In this paper, interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes has been investigated, focusing on the metal/semiconductor interfaces. As a result, the following three points are revealed: First, MIS Pt-SiO2-GaN diodes show a marked improvement in detection sensitivity, suggesting that the device interface plays a critical role in sensing. Second, exposure of the diodes to hydrogen is found to change the conduction mechanisms from Fowler-Nordheim tunneling to Pool-Frenkel emission. Third, interface trap level density of the diodes is found to be reduced by hydrogen exposure even at room temperature. These results support the validity of the hydrogen-induced dipole layer model.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

473-476

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.473

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Online since:

January 2013

Authors:

Yoshihiro Irokawa

Keywords:

GaN, Hydrogen Sensor, Interface State Density (D_it), Metal-Insulator-Semiconductor (MIS) Interface

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