Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy

Y.J. Shin; W.J. Kim; H.Y. Kim; W. Bahng

doi:10.4028/www.scientific.net/MSF.740-742.481

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Dislocation Analysis of 4H-/6H-SiC Single Crystals...

Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy

Abstract:

Micro-Raman spectroscopy is an excellent non-destructive analysis method, which compensates for disadvantages of KOH method. Raman shift of A1(LO) and E1(TO) band at threading screw dislocation(TSD) were investigated in n-type on/off-axis 4H- and 6H-SiC single crystal wafers by Micro-Raman scattering at room temperature. The results showed that A1(LO) band were shifted toward higher frequency while the E1(TO) band were shifted toward lower frequency on the on-axis wafers. The shifts are caused by increasing electron concentration and lattice disorder near the dislocation core, respectively. In the off-axis wafers, no shifts were observed possibly due to the measurement geometry which does not contain whole dislocation core.

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Materials Science Forum (Volumes 740-742)

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481-484

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.481

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Online since:

January 2013

Authors:

Y.J. Shin, W.J. Kim, H.Y. Kim, W. Bahng

Keywords:

4H-SiC, 6H-SiC, Micro-Raman Spectroscopy, On-Axis, TSD

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