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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Effect of Interface Native Oxide Layer on the...

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

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Abstract:

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

485-489

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.485

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Online since:

January 2013

Authors:

Wei Huang, Shao Hui Chang, Xue Chao Liu, Zheng Zheng Li, Tian Yu Zhou, Yan Qing Zheng, Jian Hua Yang, Er Wei Shi

Keywords:

Native Oxide, Ohmic Contact, Schottky Contact, Silicon Carbide (SiC)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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