Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

Tetsuo Hatakeyama; T. Shimizu; T. Suzuki; Y. Nakabayashi; Hajime Okumura; K. Kimoto

doi:10.4028/www.scientific.net/MSF.740-742.477

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Deep-Level-Transient Spectroscopy Characterization...

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC

Abstract:

Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO₂/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (D_it) near the conduction band of SiO₂/SiC interfaces fabricated using N₂O oxidation was much higher than that of SiO₂/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N₂O oxidation.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.477

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Online since:

January 2013

Authors:

Tetsuo Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, Hajime Okumura, K. Kimoto

Keywords:

CCDLTS, DLFTS, DLTS, Interface, Interface State, Mobility, MOS, Silicon Carbide (SiC), SiO₂/SiC, Trap

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References

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