To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes

Sergey Yu. Davydov; Alexander A. Lebedev; O.V. Posrednik

doi:10.4028/www.scientific.net/MSF.740-742.459

Paper Titles

Temperature Dependence of Raman Scattering in 4H-SiC
p.443

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
p.447

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
p.451

Theoretical Study of N Incorporation Effect during SiC Oxidation
p.455

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
p.459

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
p.465

A New-Type of Defect Generation at a 4H-SiC/SiO₂Interface by Oxidation Induced Compressive Strain
p.469

Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors
p.473

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC
p.477

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742To the Experimental Determination of the...

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes

Abstract:

A NH/3C-SiC heterojunction and a heterostructur of the NH/3C/NH type (N = 2, 4, 6, 8) are consid-ered. Two possibilities are analyzed for heterojunctions, in which a Si or a C is the contact plane of the NH polytype. In this case, the energies of the quasi-local levels in the quantum wells at the interface will be different. With the difference of these energies measured, it is possible to determine the spon-taneous polarization inherent in the NH polytype. In the presence of a spontaneous polarization field, the quasi-local levels in the left- and right-hand quantum wells of the heterostructure have dif-ferent energies. It is shown that, if the heterostructur is placed in an external electric field, it is possible to determine the magnitude of the spontaneous polarization by calculating the different between the energies of these levels. Experimental ways to find by using the suggested theoretical scenario are discussed.