Temperature Dependence of Raman Scattering in 4H-SiC

Hua Yang Sun; Siou Cheng Lien; Zhi Ren Qiu; Zhe Chuan Feng

doi:10.4028/www.scientific.net/MSF.740-742.443

Paper Titles

Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
p.425

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD Si_xC_y Thin Films
p.431

Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
p.435

Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
p.439

Temperature Dependence of Raman Scattering in 4H-SiC
p.443

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
p.447

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
p.451

Theoretical Study of N Incorporation Effect during SiC Oxidation
p.455

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
p.459

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Temperature Dependence of Raman Scattering in...

Temperature Dependence of Raman Scattering in 4H-SiC

Abstract:

A series of 4H-SiC bulk wafers with different carrier concentrations were studied by Raman scattering in temperature range of 80K to 873K. Different Raman phonon modes of 4H-SiC can be clearly observed. Most Raman peaks of different modes shift to lower frequency with increasing temperature. But abnormal behavior can be observed in the longitudinal optical-plasma coupling mode, which does not decrease in frequency monotonously when temperature increases like other Raman modes. It increases at relatively low temperature and begins to drop after a critical temperature.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

Pages:

443-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.443

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Online since:

January 2013

Authors:

Hua Yang Sun, Siou Cheng Lien, Zhi Ren Qiu, Zhe Chuan Feng

Keywords:

4H-SiC, Longitudinal Optical-Plasma Coupling (LOPC), Raman Scattering, Temperature Dependence

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