Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy

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Abstract:

The nitrogen donors residing at quasi-cubic lattice site (Nk) in 4H SiC were investigated by field sweep electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and pulsed General TRIPLE ENDOR spectroscopy. The 29Si and 13C superhyperfine lines observed in the FS ESE and ENDOR spectra of Nk in n-type 6H SiC were assigned by pulsed General TRIPLE resonance spectroscopy to the specific carbon (C) and silicon (Si) atoms located in the nearest environment of Nk in 4H SiC. The superhyperfine interaction constants and their relative signs for Nk with 29Si and 13C nuclei located in the nearest-neighbor shells are found from the General TRIPLE ENDOR spectra to be positive for C atoms and negative for Si atoms.

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Materials Science Forum (Volumes 740-742)

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439-442

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January 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. Greulich-Weber, M. Feege, J.-M. Spaeth, E.N. Kalabukhova, S.N. Lukin, E.N. Mokhov, On the microscopic structures of shallow donors in 6H SiC: studies with EPR and ENDOR, Solid State Commun. 93 (1995) 393-397.

DOI: 10.1016/0038-1098(94)00805-1

Google Scholar

[2] A.v. Duijn-Arnold, R. Zondervan, J. Schmidt, P.G. Baranov, E.N. Mokhov, Electronic structure of the N donor center in 4H-SiC and 6H-SiC, Phys. Rev. B 64 (2001) 085206 (17 pages).

DOI: 10.4028/www.scientific.net/msf.353-356.525

Google Scholar

[3] N. T. Son, E. Janzén, J. Isoya, and S. Yamasaki, Hyperfine interaction of the nitrogen donor in 4H-SiC, Phys. Rev. B 70 (2004) 193207 (4 pages).

Google Scholar

[4] E.N. Kalabukhova, S.N. Lukin, W.C. Mitchel, Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite Related Native Defect in n-Type as-Grown 4H-SiC, Mater. Sci. Forum 433-436 (2003) 499-502.

DOI: 10.4028/www.scientific.net/msf.433-436.499

Google Scholar

[5] A.M. Tyryshkin, J.J.L. Morton, A. Ardavan, S.A. Lyon, Davies electron-nuclear double resonance revisited: Enhanced sensitivity and nuclear spin relaxation, J. Chem. Phys. 124 (2006) 234508 (7 pages).

DOI: 10.1063/1.2204915

Google Scholar

[6] E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, S. Greulich-Weber, U. Gerstmann, A. Pöppl, J. Hoentsch, E. Rauls, Yu. Rozentzveig, E.N. Mokhov, M. Syväjärvi, R. Yakimova, EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies, Mater. Sci. Forum 556-557 (2007) 355-358.

DOI: 10.4028/www.scientific.net/msf.556-557.355

Google Scholar

[7] D.V. Savchenko, E.N. Kalabukhova, A. Pöppl, B.D. Shanina, Electronic structure of the shallow and deep nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy, Physica Status Solidi B (2012), DOI 10.1002/pssb.201248209 – in Press.

DOI: 10.1002/pssb.201248209

Google Scholar