Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers

Jian Wu Sun; Satoshi Kamiyama; Rositza Yakimova; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.490

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Effect of Surface and Interface Recombination on...

Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers

Abstract:

Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 μm while it stays almost constant in layers thicker than 200 μm. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 μm while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 μm. In samples with varying thicknesses, a bulk lifetime = 2.93 μs and carrier diffusion coefficient D= 2.87 cm²/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.

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Materials Science Forum (Volumes 740-742)

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490-493

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.490

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Online since:

January 2013

Authors:

Jian Wu Sun, Satoshi Kamiyama, Rositza Yakimova, Mikael Syväjärvi

Keywords:

6H-SiC, Carrier Lifetime, ΜPCD

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References

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