Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

A.V. Afanasyev; Vladimir A. Ilyin; V.V. Luchinin; A.S. Petrov

doi:10.4028/www.scientific.net/MSF.740-742.498

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Electron Transport Features in Heterostructures...

Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

Abstract:

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

498-501

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.498

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Online since:

January 2013

Authors:

A.V. Afanasyev, Vladimir A. Ilyin, V.V. Luchinin, A.S. Petrov

Keywords:

3C-Silicon Carbide, Electron Transport, Elevated Temperatures, Heteroepitaxy, p-n Heterojunction, Silicon

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References

[1] V.A. Ilyin, A.Z Kazak-Kazakevich, A.V. Matuzov, A.S. Petrov, Chemical vapor deposition of 3C silicon carbide on silicon substrates, "Materialy Elektronnoi Tekhniki (Materials of Electronic Technics)" 3 (2007) 22-26.

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[2] V.A. Ilyin, A.V. Matuzov, A.S. Petrov, Study of the formation of 3C silicon carbide heteroepitaxial structures on silicon substrates, "Materialy Elektronnoi Tekhniki (Materials of Electronic Technics)" 4 (2008) 18-26.

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[3] A.V. Afanasyev, V.A. Ilyin, A.S. Petrov etc. Patent RU № №2395867 (2010).

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