XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing

Hui Deng; Kazuya Yamamura

doi:10.4028/www.scientific.net/MSF.740-742.514

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742XPS Analysis of 4H-SiC Surfaces Oxidized by...

XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing

Abstract:

Plasma-assisted polishing (PAP) was successfully applied to single-crystal SiC to obtain an atomically flat surface without introducing any scratches. To clarify the flattening mechanism and increase the material removal rate (MRR) of PAP, investigation of the oxidation process in PAP is essential. In this study, we observed 4H-SiC (0001) surfaces processed by water vapor plasma oxidation using angle resolved X-ray photoelectron spectroscopy (ARXPS). Water vapor plasma oxidation was conducted for 1 min and 5 min. SiO2 and silicon oxycarbide were observed as the oxidation products. A decrease in the plasma irradiation time decreased the thickness of the oxide layer, particularly that of the silicon oxycarbide layer.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

514-517

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.514

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Online since:

January 2013

Authors:

Hui Deng, Kazuya Yamamura

Keywords:

4H-SiC, ARXPS, Atmospheric Pressure Plasma, Oxidation

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References

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