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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Hall Effect Characterization of 4H-SiC MOSFETs:...

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

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Abstract:

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10¹³ cm^-2 with a peak Hall mobility of 42.4 cm².V^-1.s^-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.525

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Online since:

January 2013

Authors:

V. Mortet, E. Bedel-Pereira, J.F. Bobo, F. Cristiano, Christian Strenger, V. Uhnevionak, A. Burenkov, Anton J. Bauer

Keywords:

4H-SiC, Charge Carrier Density, Coulomb Scattering, Hall Effect, Hall Mobility, MOSFET, Nitrogen Implantation

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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