Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi

Stefan Noll; Dick Scholten; Michael Grieb; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.740-742.521

Paper Titles

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon
p.502

Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face
p.506

Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
p.510

XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
p.514

Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
p.521

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
p.525

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
p.529

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
p.533

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
p.537

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Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi

Abstract:

In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced.