Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

Sebastian Roensch; Victor Sizov; Takuma Yagi; Saad Murad; Lars Groh; Stephan Lutgen; M. Krieger; Heiko B. Weber

doi:10.4028/www.scientific.net/MSF.740-742.502

Paper Titles

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts
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Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers
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Effects of Growth Parameters on SiC/SiO₂ Core/Shell Nanowires Radial Structures
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Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures
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Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon
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Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face
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Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
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XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
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Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Impact of AlN Spacer on Electron Mobility of...

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

Abstract:

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.