Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Viktoryia Uhnevionak; Christian Strenger; Alex Burenkov; Vincent Mortet; Elena Bedel-Pereira; Fuccio Cristiano; Anton J. Bauer; Peter Pichler

doi:10.4028/www.scientific.net/MSF.740-742.533

Paper Titles

XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
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Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
p.521

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
p.525

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
p.529

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
p.533

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
p.537

Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
p.541

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
p.545

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
p.549

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Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Abstract:

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.