Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Ai Osawa; Hiroshi Yano; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.740-742.541

Paper Titles

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
p.525

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
p.529

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
p.533

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
p.537

Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
p.541

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
p.545

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
p.549

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
p.553

Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
p.557

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Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Abstract:

4H-SiC MOSFETs were characterized using charge pumping (CP) technique to monitor interface state density (D_it) not only in the upper half of the bandgap (E_g) but also in the lower half of E_g. Comparison between POCl₃- and NO-annealed MOSFETs was made using CP technique to reveal the different interface properties. The CP measurements of MOSFETs revealed that POCl₃ annealing can reduce D_it near E_c, whereas it increases donor-like D_it in the lower half of E_g.