Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Marko J. Tadjer; Aurore Constant; Philippe Godignon; Sara Martin-Horcajo; Alberto Bosca; Fernando Calle; Maxime Berthou; José Millán

doi:10.4028/www.scientific.net/MSF.740-742.553

Paper Titles

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
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Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
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Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
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A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
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Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
p.557

Boron Diffusion in Silicon Carbide
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Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
p.565

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Gate Oxide Stability of 4H-SiC MOSFETs under...

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Abstract:

On- and off-state bias-temperature instability (BTI) measurements of 4H-SiC field effect transistors fabricated in a gate-oxide-first process were performed in the 30-450 °C temperature range. Stable operation under off-state stress at 300 °C is reported. On-state bias-instability stress revealed behavior consistent with the presence of hole traps in the SiC channel. The interface state density Dit increased from 2.5 eV^-1cm^-2 to 6.6 eV^-1cm^-2 as a function of positive stress duration.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.553

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Online since:

January 2013

Authors:

Marko J. Tadjer, Aurore Constant, Philippe Godignon, Sara Martin-Horcajo, Alberto Bosca, Fernando Calle, Maxime Berthou, José Millán

Keywords:

4H-SiC MOSFET, Bias-Temperature Instability, Gate Oxide, Threshold Voltage

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References

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