Boron Diffusion in Silicon Carbide

O.V. Aleksandrov; E.N. Mokhov

doi:10.4028/www.scientific.net/MSF.740-742.561

Paper Titles

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
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A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
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Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
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Boron Diffusion in Silicon Carbide
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Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
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Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Boron Diffusion in Silicon Carbide

Boron Diffusion in Silicon Carbide

Abstract:

For the description of features of boron diffusion of in silicon carbide the new two-component model is offer. The first component is the “shallow” boron - boron atoms in silicon sites (B_Si). This component is prevailed in the surface region of diffusion layers and has rather low speed of diffusion. The second component is the “deep” boron – impurity-defect pairs of boron with carbon vacancy (B_Si-V_C). This component is prevailed in the volume region of diffusion layers and has rather high speed of diffusion. By means of model the influence of nitrogen impurity and isoconcentration diffusion of an isotope ¹⁰B are described.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

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561-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.561

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Online since:

January 2013

Authors:

O.V. Aleksandrov, E.N. Mokhov

Keywords:

Boron Diffusion in SiC, Silicon Carbide (SiC), Two-Component Model

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