A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals

Tatsuo Fujimoto; Hiroshi Tsuge; Masakazu Katsuno; Shinya Sato; Hirokatsu Yashiro; Hosei Hirano; Takayuki Yano

doi:10.4028/www.scientific.net/MSF.740-742.577

Paper Titles

Boron Diffusion in Silicon Carbide
p.561

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
p.565

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
p.569

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
p.573

A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
p.577

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
p.581

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
p.585

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
p.589

Complex Study of SiC Epitaxial Films
p.593

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742A Possible Mechanism for Hexagonal Void Movement...

A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals

Abstract:

A possible mechanism of hexagonal void movement during Physical vapor transport (PVT)-growth is proposed in terms of quasi-equilibrium phase transition process based upon the Si-C binary phase diagram. The hexagonal void movement can be realized when two different reactions occurs simultaneously: (1) SiC(s) solidification and (2) decomposition without graphitization. Further, the kinetic instability of the void movement observed is also discussed, and found to be explainable if the effect of the temperature gradient existing in the crystal grown in conventional PVT-process is included.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

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577-580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.577

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Online since:

January 2013

Authors:

Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Shinya Sato, Hirokatsu Yashiro, Hosei Hirano, Takayuki Yano

Keywords:

Growth Instability, Hexagonal Voids, Micropipe Defects, Si-C Binary Phase Diagram

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