Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases

Tomoaki Hatayama; Tetsuya  Tamura; Hiroshi  Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.740-742.589

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Comparison of Etch Pit Shapes on Off-Oriented...

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases

Abstract:

An etch pit shape of off-angled 4H-SiC Si-face formed by different halogen gases such as chlorine trifluoride (ClF3) and a mixed gas (O2+Cl2) of oxygen and chlorine in nitrogen (N2) ambience has been studied. One kind of etch pit with the crooked hexagon was formed at etching temperature under 500oC. The angle of etch pit measured by the cross-sectional atomic force microscope image was about 10o from the [11-20] view. A dislocation type of the etch pit was discussed in comparison with the etch pit shape and an X-ray topography image.

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Materials Science Forum (Volumes 740-742)

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589-592

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.589

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Online since:

January 2013

Authors:

Tomoaki Hatayama, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki

Keywords:

Chlorine Trifluoride, Dislocation, Etch Pit, Etching, Halogen

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