Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates

Takuji Hosoi; Yusuke Uenishi; Shuhei Mitani; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.740-742.605

Paper Titles

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
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Complex Study of SiC Epitaxial Films
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Contact-Free Micropipe Reactions in Silicon Carbide
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Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
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Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
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Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
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Effects of Al Ion Implantation on 3C-SiC Crystal Structure
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Electrical Characterisation of Epitaxially Grown 3C-SiC Films
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Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Dielectric Properties of Thermally Grown SiO2 on...

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates

Abstract:

The bulk properties of thermally grown SiO₂ on 4H-SiC(0001) substrates were thoroughly investigated by capacitance-voltage (C-V) measurement, atomic force microscopy (AFM), spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). The equivalent oxide thickness (EOT) extracted from the capacitance-voltage (C-V) characteristics of TiN/SiO₂ capacitors was proportional to the physical thickness (T_phys), but the slope of the linear fit was found to be 1.11, indicating that the permittivity of SiO₂ on 4H-SiC formed by thermal oxidation is only about 3.5, which is lower than the commonly accepted value of 3.9. Since XPS analysis revealed that the oxide of SiC was stoichiometric and the atomic concentration of residual carbons in the oxide measured by SIMS was sufficiently low (10¹⁷ cm^-3), the low permittivity of thermal oxides of 4H-SiC may originate from the reduced bulk density, which can be predicted by the Clausius-Mossotti relation.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

605-608

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.605

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Online since:

January 2013

Authors:

Takuji Hosoi, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC, Dielectric Constant, Permittivity, SiO₂, Thermal Oxidation

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References

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