Complex Study of SiC Epitaxial Films

E.M. Geyfman; V.V. Chibirkin; G.Yu. Kamentsev; N.A. Gartsev; N.M. Davydova; B.P. Surin

doi:10.4028/www.scientific.net/MSF.740-742.593

Paper Titles

A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
p.577

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
p.581

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
p.585

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
p.589

Complex Study of SiC Epitaxial Films
p.593

Contact-Free Micropipe Reactions in Silicon Carbide
p.597

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
p.601

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
p.605

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Complex Study of SiC Epitaxial Films

Complex Study of SiC Epitaxial Films

Abstract:

4H-SiC epitaxial films grown on 4H-SiC in CVD reactor VP508GFR are investigated using FTIR, X-Ray diffraction, C-V measurements, stylus profiler and DIC optical microscopy.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

593-596

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.593

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Online since:

January 2013

Authors:

E.M. Geyfman, V.V. Chibirkin, G.Yu. Kamentsev, N.A. Gartsev, N.M. Davydova, B.P. Surin

Keywords:

4H Polytype, C-V Measurement, Donor Concentration, Epitaxial Film Thickness, Epitaxial Layer, Fourier Transform Infrared Spectroscopy (FTIR), FT-IR, Profiler, Rocking Curve, Roughness, Silicon Carbide (SiC), X-Ray Diffraction (XRD), ZAO «NPK «Elkar», ZAO NPK «Electrovypriamitel»

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