Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy

T. Yamashita; H. Matsuhata; Y. Miyasaka; M. Odawara; K. Momose; T. Sato; M. Kitabatake

doi:10.4028/www.scientific.net/MSF.740-742.585

Paper Titles

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
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Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
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Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
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Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
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Complex Study of SiC Epitaxial Films
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Contact-Free Micropipe Reactions in Silicon Carbide
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Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Characterization of (4,4)- and (5,3)-Type...

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy

Abstract:

Experimentally,the grazing-incident X-ray topography at different diffraction conditions, and room temperature photo-luminescence spectroscopy, various different types of stacking-faults in epitaxial films on 4-degrees-off 4H-SiC wafers were identified precisely without wafer cutting. Their types and the numbers were investigated statistically. It became clear that (4,4) type stacking-faults were the most common ones and two different types were identified. Still 34% of the stacking-faults were unknown types in the present investigation.Several different kinds of stacking-faults formed on the surface of 4-degrees-off 4H-SiC epitaxial wafers were investigated. Their types could be identified and type distribution in a wafer could be obtained using X-ray topography and room temperature Photo-Luminescence without wafer cutting. Type determination of 8H(4,4)- stacking fault ; with or without strain field, could also be decideddemonstrated using this method.