Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Xuan Zhang; Masahiro Nagano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.740-742.601

Paper Titles

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
p.585

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
p.589

Complex Study of SiC Epitaxial Films
p.593

Contact-Free Micropipe Reactions in Silicon Carbide
p.597

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
p.601

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
p.605

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609

Effects of Al Ion Implantation on 3C-SiC Crystal Structure
p.613

Electrical Characterisation of Epitaxially Grown 3C-SiC Films
p.617

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Conversion of Basal Plane Dislocations to...

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Abstract:

Basal plane dislocations (BPDs) converting to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers after thermal annealing at high temperatures. Grazing incidence reflection synchrotron X-ray topography was used to investigate the dislocation behaviors. It is argued that the conversion is achieved by constricted BPD segments cross-slipping to the prismatic plane and TED glide on its slip plane. Higher conversion ratio and better surface morphology were achieved by performing ion implantation and annealing before epitaxial growth.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

601-604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.601

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Online since:

January 2013

Authors:

Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

Keywords:

Basal Plane Dislocation (BPD), BPD Conversion, Ion Implantation, SiC Epilayers, Thermal Annealing

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