Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Duy Minh Nguyen; Runhua Huang; Luong Viet Phung; Dominique Planson; Maxime Berthou; Philippe Godignon; Bertrand Vergne; Pierre Brosselard

doi:10.4028/www.scientific.net/MSF.740-742.609

Paper Titles

Complex Study of SiC Epitaxial Films
p.593

Contact-Free Micropipe Reactions in Silicon Carbide
p.597

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
p.601

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
p.605

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609

Effects of Al Ion Implantation on 3C-SiC Crystal Structure
p.613

Electrical Characterisation of Epitaxially Grown 3C-SiC Films
p.617

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
p.621

Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
p.625

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Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Abstract:

10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.