Electrical Properties of MOS Structures on 4H-SiC (11-20) Face

Junji Senzaki; Atsushi Shimozato; Kozutoshi Kajima; Keiko Aryoshi; Takahito Kojima; Shinsuke Harada; Yasunori Tanaka; Hiroaki Himi; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.740-742.621

Paper Titles

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
p.605

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609

Effects of Al Ion Implantation on 3C-SiC Crystal Structure
p.613

Electrical Characterisation of Epitaxially Grown 3C-SiC Films
p.617

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
p.621

Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
p.625

Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates
p.629

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
p.633

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
p.637

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Electrical Properties of MOS Structures on 4H-SiC...

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face

Abstract:

Threshold voltage (V_TH) instability, channel mobility and oxide reliability have been investigated for meta-oxide-semiconductor (MOS) structures on 4H-SiC (11-20) face using various gate oxidation procedures. Channel mobility of n-channel MOSFET with a gate oxide by pyrogenic oxidation is higher than that by dilute-DRY oxidation followed by a nitrous oxide (N₂O) post-oxidation annealing (POA). On the other hand, oxide reliability for the pyrogenic oxides is poor compared with the dilute-DRY/N₂O oxides. A Hydrogen POA is effective in an improvement of channel mobility for both oxides, but causes a harmful effect on V_TH stability. Temperature dependence of V_TH instability indicates that MOS structure grown by dilute-DRY followed by N₂O POA is suitable for a practical use of SiC MOS power devices.