Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Birgit Kallinger; Patrick Berwian; Jochen Friedrich; Mathias Rommel; Maral Azizi; Christian Hecht; Peter Friedrichs

doi:10.4028/www.scientific.net/MSF.740-742.633

Paper Titles

Electrical Characterisation of Epitaxially Grown 3C-SiC Films
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Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
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Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
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Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates
p.629

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
p.633

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
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Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
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Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Abstract:

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.