Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

T. Yamashita; H. Matsuhata; Y. Miyasaka; H. Ohshima; M. Sekine; K. Momose; T. Sato; M. Kitabatake

doi:10.4028/www.scientific.net/MSF.740-742.649

Paper Titles

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
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Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
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Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
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Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
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Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
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Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Origin Analyses of Obtuse Triangular Defects in...

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography

Abstract:

Triangular shaped defects with obtuse-angles at tops and long bases are often observed in surfaces of epitaxial films. We have investigated the origins of them, and it became clear that these defects without clear origins were formed by contaminations of tantalum carbide particles. Formations of micro-order pipes at the origin points of these defects were also observed. These micro-order pipes did not accompany strain and dislocations around them, though their appearances were very similar to the ones so-called micro-pipes.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

649-652

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.649

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Online since:

January 2013

Authors:

T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima, M. Sekine, K. Momose, T. Sato, M. Kitabatake

Keywords:

Electron Microscopy, Silicon Carbide (SiC), Synchrotron X-Ray Topography, Triangular Defect

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References

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