Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

M. Nagano; Isaho Kamata; H. Tsuchida

doi:10.4028/www.scientific.net/MSF.740-742.653

Paper Titles

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
p.637

Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
p.641

Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
p.645

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
p.649

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.653

Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
p.657

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
p.661

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
p.665

Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
p.669

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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

Abstract:

Photoluminescence images and spectra of threading screw dislocations (TSDs) and threading edge dislocations (TEDs) were obtained and compared with synchrotron X-ray topography images. Discrimination between TSDs and TEDs by analysis of PL spot size in the imaging technique as well as PL spectra of the dislocations in a near infrared region is demonstrated. We also have succeeded in cross-sectional PL imaging of threading dislocations in a thick epilayer.