Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD

Oleg Jakovlev; Tino Fuchs; Franziska Rohlfing; Helmut Seidel

doi:10.4028/www.scientific.net/MSF.740-742.657

Paper Titles

Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
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Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
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Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
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Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
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Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
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Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
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Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
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Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD

Abstract:

We introduce a novel high temperature PECVD process and use it for the deposition of silicon carbide thin films on oxidized silicon wafers at 900°C substrate temperature. A variation of the atomic composition over a wide range is achieved by altering the flow ratio of the precursors silane (SiH₄) and acetylene (C₂H₂). XPS analysis is performed to verify the silicon to carbon ratio in the deposited layers. The resistivity of the obtained thin films shows a strong dependence on the Si/C-ratio. Four point measurements show the resistivity ranging between 5•10^-3Ωcm for C-rich layers and >10⁷Ωcm for near stoichiometric layers. We investigate the piezoresistivity of the SiC layers at room temperature under compressive and tensile strain using the four point bending method. The same method is used to analyze selected layers at elevated temperatures up to 600°C. Based on the results we evaluate the applicability of the obtained thin films for strain transducing in harsh environment MEMS sensors.