Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

Pavel Hazdra; Vít Záhlava; Jan Vobecký; Maxime Berthou; Andrei Mihaila

doi:10.4028/www.scientific.net/MSF.740-742.661

Paper Titles

Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
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Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
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Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
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Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
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Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
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Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
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Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Radiation Defects Produced in 4H-SiC Epilayers by...

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

Abstract:

Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements. Results show that both projectiles produce identical, strongly localized damage peaking at ion’s projected range. Radiation defects have a negligible effect on dynamic characteristic of irradiated 4H-SiC Schottky diodes, however acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at very low irradiation fluences.

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Materials Science Forum (Volumes 740-742)

Pages:

661-664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.661

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Online since:

January 2013

Authors:

Pavel Hazdra, Vít Záhlava, Jan Vobecký, Maxime Berthou, Andrei Mihaila

Keywords:

Alpha-Particles, Proton, Radiation Defect, Silicon Carbide (SiC)

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References

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